Publication
Materials 15, 8784 (2022)
X-ray-Induced Scintillation Properties of Nd-Doped Bi<sub>4</sub>Si<sub>3</sub>O<sub>12</sub> Crystals in Visible and Near-Infrared Regions
Author
Kensei Ichiba, <u>Kai Okazaki</u>, Yuma Takebuchi, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi and Takayuki Yanagida
Category
Peer-Reviewed Paper as the co-author
Abstract
Abstract
Undoped, 0.5, 1.0, and 2.0% Nd-doped Bi4Si3O12 (BSO) crystals were synthesized by the floating zone method. Regarding photoluminescence (PL) properties, all samples had emission peaks due to the 6p–6s transitions of Bi3+ ions. In addition, the Nd-doped samples had emission peaks due to the 4f–4f transitions of Nd3+ ions as well. The PL quantum yield of the 0.5, 1.0, and 2.0% Nd-doped samples in the near-infrared range were 67.9, 73.0, and 56.6%, respectively. Regarding X-ray-induced scintillation properties, all samples showed emission properties similar to PL. Afterglow levels at 20 ms after X-ray irradiation of the undoped, 0.5, 1.0, and 2.0% Nd-doped samples were 192.3, 205.9, 228.2, and 315.4 ppm, respectively. Dose rate response functions had good linearity from 0.006 to 60 Gy/h for the 1.0% Nd-doped BSO sample and from 0.03 to 60 Gy/h for the other samples.
